Tyhach, M., Altman, D., Bernstein, S., Korenstein, R., Cho, J., Goodson, K.E., Francis, D., Faili, F., Ejeckam, F., Kim, S., and Graham, S., “S2-T3: Next generation gallium nitride HEMTs enabled by diamond substrates,” IEEE Lester Eastman Conference on High Performance Devices (LEC) 2014, Aug. 5-7, Ithaca, NY, USA.



This paper describes the thermal and electrical performance of GaN on Diamond devices, where the GaN on Diamond substrates are fabricated by taking epi from a host growth substrate and replacing it through direct growth of CVD diamond. We have found GaN on Diamond material improves thermal performance while maintaining electrical performance. This work demonstrates that GaN on Diamond technology can form the foundation of a next generation GaN device with 3X (or more) higher areal power density.