Yalon, E., Aslan, O.B., Smithe, K.K.H., McClellan, C.J., Suryavanshi, S.V., Xiong, F., Sood, A., Neumann, C.M., Xu, X., Goodson, K.E., Heinz, T.F., and Pop, E., 2017, “Temperature Dependent Thermal Boundary Conductance of Monolayer MoS2 by Raman Thermometry,” ACS Applied Materials & Interfaces, Vol. 9, pp. 43013-43020.



The electrical and thermal behavior of nanoscale devices based on two-dimensional (2D) materials is often limited by their contacts and interfaces. Here we report the temperature-dependent thermal boundary conductance (TBC) of monolayer MoS2 with AlN and SiO2, using
Raman thermometry with laser-induced heating. The temperature-dependent optical absorption of the 2D material is crucial in such experiments, which we characterize here for the first time above room temperature. We obtain TBC ∼ 15 MWm−2 K−1 near room temperature, increasing as ∼ T0.65 in the range 300−600 K. The similar TBC of MoS2 with the two substrates indicates that MoS2 is the “softer” material with weaker phonon irradiance, and the relatively low TBC signifies that such interfaces present a key bottleneck in energy dissipation from 2D devices. Our approach is needed to correctly perform Raman thermometry of 2D materials, and our findings are key for understanding energy coupling at the nanoscale.