Won, Y.*, Cho, J.*, Agonafer, D., Asheghi, M., and Goodson, K.E., “Cooling Limits to GaN HEMT Technology,” IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) 2013, Oct. 13-16, Monterey, CA, USA.



The peak power density of GaN HEMT technology is limited by a hierarchy of thermal resistances from the junction to the ambient. Here we explore the ultimate or fundamental cooling limits made possible by advanced thermal management technologies including GaNdiamond composites and nanoengineered heat sinks. Through continued attention to near-junction resistances and extreme flux convection, power densities that may exceed 50 kW/cm2 – depending on gate width and hotspot dimension – are feasible within 5 years.