Characterization of the Thermal Boundary Conductance between MoS2 and SiO2 via In-Situ Raman Spectroscopy of Functioning Transistors

Yalon, E., Smithe, K.K.H., Aslan, O.B., McClellan, C.J., Xiong, F., Shin, Y.C., Sood, A., Suryavanshi, S.V., Xu, R., Neumann, C., Goodson, K.E., Heinz, T., Pop, E., “Characterization of the Thermal Boundary Conductance between MoS2 and SiO2 via In-Situ Raman Spectroscopy of FunctioningTransistors”, Materials Research Society (MRS) Spring Meeting, April 2017, Phoenix, AZ