Phonon and Electron Transport through Ge2Sb2Te5 Films and Interfaces Bounded by Metals

Lee, J., Bozorg-Grayeli, E., Kim, S., Asheghi, M., Wong, H.-S., and Goodson, K.E., 2013, "Phonon and Electron Transport through Ge2Sb2Te5 Films and Interfaces Bounded by Metals," Applied Physics Letters, Vol. 102, 191911.

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While atomic vibrations dominate thermal conduction in the amorphous and face-centered cubic phases of Ge2Sb2Te5, electrons dominate in the hexagonal closed-packed (hcp) phase. Here we separate the electron and phonon contributions to the interface and volume thermal resistances for the three phases using time-domain thermoreflectance and electrical contact resistance measurements. Even when electrons dominate film-normal volume conduction (i.e. 70% for the hcp phase), their contribution to interface heat conduction is overwhelmed by phonons for high-quality interfaces with metallic TiN.

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