Tungsten-doped Ge2Sb2Te5 phase change material for high-speed optical switching devices

Guo, P.F., Burrow, J.A., Sevison, G.A., Kwon, H., Perez, C., Hendrickson, J.R., Smith, E.M., Asheghi, M., Goodson, K.E., Agha, I., Sarangan, A.M., 2020,  Tungsten-doped Ge2Sb2Te5 phase change material for high-speed optical switching devices," Applied Physics Letters, Vol. 116, 131901.

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The large impedance mismatch between the highly resistive amorphous state and the highly conductive crystalline state of Ge2Sb2Te5 is an impediment for the realization of high-speed electrically switched optical devices. In this paper, we demonstrate that tungsten doping can reduce this resistivity contrast and also results in a lower amorphous state resistivity. Additionally, it lowers the contact resistance, improves the optical contrast, and extends the face-centered-cubic state up to 350 degrees C, with a minimal impact on thermal conductivity.

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