Thermoelectric Characterization and Power Generation Using a Silicon-on-Insulator Substrate

Lee, J., Kim, S., Marconnet, A., in t' Zandt, M.A.A., Asheghi, M., Wong, H.S.P., and Goodson, K.E., 2012, "Thermoelectric Characterization and Power Generation using a Silicon-on-Insulator Substrate," Journal of MicroElectroMechanical Systems, Vol. 21, pp. 4-6.

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We demonstrate techniques for measuring thermoelectric voltages and generating on-chip power using a silicon-on-insulator substrate.  Our design uses lateral heat conduction in the silicon overlayer to establish temperature gradients, which dramatically reduces
microfabrication complexity compared to competing designs based on a free-standing membrane. This letter characterizes the thermoelectric power of a metal–semiconductor structure involving a doped SbTe alloy that is relevant for phase-change memory. The thermoelectric power of the SbTe–TiW thermocouple is 24 μV/K, and the power generation output achieves up to 0.56 μW/cm2 with a temperature gradient of 18◦K.

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