Department of Mechanical Engineering
Kenneth E. Goodson
Lee, J., Kim, S., Marconnet, A., in t' Zandt, M.A.A., Asheghi, M., Wong, H.S.P., and Goodson, K.E., 2012, "Thermoelectric Characterization and Power Generation using a Silicon-on-Insulator Substrate," Journal of MicroElectroMechanical Systems, Vol. 21, pp. 4-6.
We demonstrate techniques for measuring thermoelectric voltages and generating on-chip power using a silicon-on-insulator substrate. Our design uses lateral heat conduction in the silicon overlayer to establish temperature gradients, which dramatically reduces
microfabrication complexity compared to competing designs based on a free-standing membrane. This letter characterizes the thermoelectric power of a metal–semiconductor structure involving a doped SbTe alloy that is relevant for phase-change memory. The thermoelectric power of the SbTe–TiW thermocouple is 24 μV/K, and the power generation output achieves up to 0.56 μW/cm2 with a temperature gradient of 18◦K.