Department of Mechanical Engineering
Kenneth E. Goodson
Reifenberg, J.P., Chang, K.W., Panzer, M.A., Kim, S., Rowlette, J.A., Asheghi, M., Wong, H.S.P., and Goodson, K.E., 2010, "Thermal Boundary Resistance Measurements for Phase-Change Memory Devices," IEEE Electron Device Letters, Vol. 31, pp. 56-58.
Thermal interfaces play a key role in determining the programming energy of phase-change memory (PCM) devices. This letter reports the picosecond thermoreflectance measurements of thermal boundary resistance (TBR) at TiN/GST and Al/TiN interfaces, as well as the intrinsic thermal conductivit measurements of fcc GST between 30 ◦C and 325 ◦C. The TiN/GST TBR decreases with temperature from ~26 to ~18 m2 K/GW, and the Al/TiN ranges from ~7 to 2.4 m2 K/GW. A TBR of 10 m2 K/GW is equivalent in thermal resistance to ~192 nm of TiN. The fcc GST conductivity increases with temperature between ∼0.44 and 0.59 W/m/K. A detailed understanding of TBR is essential for optimizing the PCM technology.