Department of Mechanical Engineering
Kenneth E. Goodson
Panzer, M.A., Shandalov, M., Rowlette, J.A., Oshima, Y., Chen, Y.W., McIntyre, P.C., and Goodson, K.E., 2009, "Thermal Properties of Ultrathin Hafnium Oxide Gate Dielectric Films," IEEE Electron Device Letters, Vol. 30, pp. 1269-1271.
Thin-film HfO2 is a promising gate dielectric material that will influence thermal conduction in modern transistors. This letter reports the temperature dependence of the intrinsic thermal conductivity and interface resistances of 56–200-Å-thick HfO2 films. A picosecond pump–probe thermoreflectance technique yields room-temperature intrinsic thermal conductivity values between 0.49 and 0.95 W/(m · K). The intrinsic thermal conductivity and interface resistance depend strongly on the film-thickness-dependent microstructure.