Thermal Characterization of IC Interconnect Passivation using Joule Heating and Optical Thermometry

Ju, Y.S., Kurabayashi, K., and Goodson, K.E., 1998, "Thermal Characterization of IC Interconnect Passivation using Joule Heating and Optical Thermometry," Microscale Thermophysical Engineering, Vol. 2, pp. 101-110.

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The temperature rise in microdevices is in many cases strongly in creased by the thermal resistance of dielectric passivation layers. This problem is especially important for integrated circuits (ICs) containing novel low-dielectric-constant passiv ation, such as polymers and porous oxides. We report progress on developing a tech ique for measuring the thermal properties of these passive layers, which uses harmonic Joule heating in a metal line and compares sol tions to the heat equation with a photothermal signal. This approach makes measurements possible over a wide range of heating frequencies and allows the thermal conductivity to be determined with out calibration or precise knowledge of the heat capacity of the layer.  Data are reported for the thermal conductiv ity of thermally grown silicon dioxide and polymer thin films

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