Jaeho Lee

Short Bio:

Jaeho received his B.S. in Mechanical Engineering with highest honors from Georgia Institute of Technology in 2007 and his M.S. in Mechanical Engineering from Stanford University in 2009. Jaeho is currently pursuing Ph.D. in Mechanical Engineering and Ph.D. Minor in Electrical Engineering at Stanford University. His current research focuses on developing electrothermal  metrology for thin film materials and understanding thermal and thermoelectric phenomena in nanoelectronic devices such as phase-change memory. 

Skills: 

- Expertise in electrical Joule heating techniques and probe station measurements

- Comfortable with electrical test equipment and software including COMSOL, ANSYS, MATLAB, Solid Works, L-edit, etc.

- Experience with cleanroom facility

- Serving as a target changer for a DC/RF magnetron sputtering chamber

- Trained on material characterization tools such as SEM, FIB, XRD, and XRR.

- Fluent in Korean and English

Journal Publications:

J. Lee, Z. Li, J. P. Reifenberg, M. Asheghi, and K. E. Goodson, “Thermal Conductivity Anisotropy and Grain Structure of Ge2Sb2Te5 Films,” Journal of Applied Physics, vol. 109, 084902, Apr. 2011.

J. Lee, S. Kim, R. Jeyasingh, M. Asheghi, H.-S. P. Wong, and K. E. Goodson, “Micro Thermal Stage for Electrothermal Characterization of Phase Change Memory,” IEEE Electron Device Letters, vol.32, no.7, pp.952-954, Jul. 2011.

J. Lee, S. Kim, A. Marconnet, M.A.A. in 't Zandt, M. Asheghi, H.-S. P. Wong, and K. E. Goodson, “Thermoelectric Characterization and Power Generation Using a Silicon-on-Insulator Substrate,” Journal of Microelectromechanical Systems, 2175704, 2011.

J. Lee, M. Asheghi, and K. E. Goodson, “Impact of Thermoelectric Phenomena on Phase Change Memory Performance Metrics and its Scaling,” Nanotechnology, 23, 205201, 2012.

J. Lee, T. Kodama, Y. Won, M. Asheghi, and K. E. Goodson, “Phase and Temperature Dependent Thermoelectric Properties of Ge2Sb2Te5 Films down to 25 nm Thickness,” Journal of Applied Physics, under review.

Y. Won, J. Lee, M. Asheghi, T. W. Kenny, and K. E. Goodson, “Phase and Thickness Dependent Modulus of Ge2Sb2Te5 Films down to 25 nm Thickness,” Applied Physics Letters, vol. 100, 161905, Apr. 2012.

S. Yoneoka, J. Lee, M. Liger, G. Yama, T. Kodama, J. Provine, R. T. Howe, K. E. Goodson, and T. W. Kenny, “Electrical and thermal conduction in ALD nanobridges down to 7-nm thickness,” Nano Letters, ln203548w, 2011.

Z. Li, J. Lee, J. P. Reifenberg, M. Asheghi, R. Jeyasingh, H.-S. P. Wong, and K. E. Goodson, Grain Boundaries, “Phase Impurities, and Anisotropic Thermal Conduction in Phase-Change Memory,” IEEE Electron Device Letters, vol.32, no.7, pp.961-963, Jul. 2011.